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meso-Tetra(4-carboxyphenyl)porphine

meso-Tetra(4-carboxyphenyl)porphine

Benzaldehyde, 4,4',4'',4'''-(21h,23h-Porphine-5,10,15,20-Tetrayl)Tetrakis

Benzaldehyde, 4,4',4'',4'''-(21h,23h-Porphine-5,10,15,20-Tetrayl)Tetrakis

150805-46-2 98%(过柱子)

Zirconiumtungstate

Zirconiumtungstate

16853-74-0 99.90%

Anti perovskite manganese nitrides

Anti perovskite manganese nitrides

Molybdenum Diboride

Molybdenum Diboride

12007-27-1 0.5-0.8um

1-vinyl-3-ethylimidazoliumbis((trifluorompropyl)sulfonyl)imide

1-vinyl-3-ethylimidazoliumbis((trifluorompropyl)sulfonyl)imide

319476-28-3 99.0%

HAFNIUMSILICIDE

HAFNIUMSILICIDE

12401-56-8 99.5%，D501-3μm

HAFNIUM CARBIDE

HAFNIUM CARBIDE

12069-85-1 99.5%,100nm

Titanium(IV) oxide

Titanium(IV) oxide

13463-67-7 99.99%,100nm,金红,亲水

TANTALUM SILICIDE

TANTALUM SILICIDE

12039-79-1 99.9%，1-3um

Zirconium(IV) oxide-yttria stabilized

Zirconium(IV) oxide-yttria stabilized

114168-16-0 5%摩尔比,8%质量比,50-80nm

Zirconium(IV) oxide-yttria stabilized

Zirconium(IV) oxide-yttria stabilized

114168-16-0 99.9%,22-53μm

HAFNIUM BORIDE

12007-23-7 99.5%,500nm

Titanium carbide

Titanium carbide

12070-08-5 100-200目，激光熔覆粉

Titanium boride

Titanium boride

12045-63-5 99.9% ,100-200nm

Silicon carbide

Silicon carbide

409-21-2 99.5%, 10-50μm

ZIRCONIUM BORIDE

ZIRCONIUM BORIDE

12045-64-6 ≥99% ,100nm

ZIRCONIUM BORIDE

ZIRCONIUM BORIDE

12045-64-6 99.5% ＜1μm

HAFNIUM CARBIDE

HAFNIUM CARBIDE

12069-85-1 99% ,100-300nm

Tungsten Carbide

Tungsten Carbide

12070-12-1 99.9%,200-300mesh

1 2 3 4 5 6 7 8 9 10

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